Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process
Abstract
In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction with silicon or standing on insulating layers can be transformed into the PtGe2 phase. The solubility of this phase in a sulfuric peroxide mixture (SPM) with-
out altering PtSi is demonstrated. The suitability and scalability of the proposed integration scheme is shown through the successful integration and characterization of PtSi source/drain contacts in p-type MOSFETs.
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